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BD9204F 00C1X 73004 2N2380A 0P22D 2SA640 A4336 FBP10
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  prelim. 1/95 pnp SM3177A npn sm3178a tec magna magnatec. telephone +44(0)1455 554711. fax +44(0)1455 558843. e-mail: magnatec@semelab.co.uk website: http://www.semelab.co.uk v cbo collector C base voltage v ceo collector C emitter voltage (i b = 0) v ebo emitter C base voltage i c collector current i c(pk) peak collector current i b base current p d total dissipation at t c = 25c derate above 25 c p d total dissipation at t a = 25c derate above 25 c t stg operating and storage temperature range 240v 160v 5v 8a 16a 2a 60w 0.48c/w 2w 0.016c/w C65 to 150c mechanical data dimensions in mm 123 10.16 (0.40) 10.41 (0.41) 9.65 (0.38) 10.66 (0.42) 2.54 (0.10) 3.04 (0.12) 3.53 (0.139) 4.09 (0.161) dia. 5.84 (0.23) 6.86 (0.27) 14.22 (0.560) 15.88 (0.625) 4.06 (0.16) max. 2.54 (0.10) max. 9.02 (0.355) 9.40 (0.370) 12.70 (0.500) 14.27 (0.562) 4.83 (0.19) 5.33 (0.21) 2.29 (0.09) 2.79 (0.11) 6.35 (0.25) max. 0.51 (0.020) 1.14 (0.045) 1.14 (0.045) 1.78 (0.070) 1.14 (0.045) 1.40 (0.055) 2.03 (0.080) 2.16 (0.085) 2.03 (0.080) 2.92 (0.115) 3.56 (0.14) 4.83 (0.19) 3.18 (0.125) max. 0.38 (0.015) 0.64 (0.025) complementary silicon power transistors back metal is collector. pin 1 C base pin 2 C collector pin 3 C emitter absolute maximum ratings (t case = 25c unless otherwise stated) toC220ab for use as high frequency drivers in audio amplifiers. 4
prelim. 1/95 pnp SM3177A npn sm3178a tec magna magnatec. telephone +44(0)1455 554711. fax +44(0)1455 558843. e-mail: magnatec@semelab.co.uk website: http://www.semelab.co.uk parameter test conditions min. typ. max. unit 160 0.1 10 10 40 40 40 20 2:1 0.4 0.5 1.0 1.0 30 2.5 62.5 v ma m a v v mhz c/w i c = 10ma i b = 0 v ce = 160v i b = 0 v ce = 240v i e = 0 v be = 5v i c = 0 i c = 100ma v ce = 2v i c = 2a v ce = 2v i c = 3a v ce = 2v i c = 4a v ce = 2v h fe @ i c = 1 to 3a i c = 1a i b = 100ma i c = 3a i b = 300ma i c = 1a v ce = 2v i c = 3a v ce = 2v i c = 500ma v ce = 10v f test = 10mhz collector C emitter sustaining voltage collector C emitter cutCoff current collector C base cutCoff current emitter cutCoff current dc current gain h fe vs h fe ratio collector C emitter saturation voltage base C emitter on voltage current gain C bandwidth product f t = |h fe | ? f test thermal resistance junction C case thermal resistance junction C ambient * pulse test t p = 300 m s , d 2%. v ceo(sus)* i ceo i cbo i ebo h fe* linearity* v ce(sat)* v be(on)* f t r q jc r q ja off characteristics on characteristics thermal characteristics dynamic characteristics forward bias safe operating area 1 10 100 1000 0.01 0.1 1 10 100 v collector ? emitter voltage (v) ce i collector current (a) c d . c . t = 5 m s p t = 1 0 0 s p electrical characteristics (t c = 25c unless otherwise stated)
prelim. 1/95 pnp SM3177A npn sm3178a tec magna magnatec. telephone +44(0)1455 554711. fax +44(0)1455 558843. e-mail: magnatec@semelab.co.uk website: http://www.semelab.co.uk small signal current gain C SM3177A 0.5 1 10 5 10 100 5 2 50 20 f frequency (mhz) h small signal current gain fe v = 10v ce c t = 25?c c i = 0.5a current gain bandwidth product SM3177A 0.1 1 10 0 20 40 60 80 100 0.2 0.5 0.2 0.5 f current gain bandwidth product t i current gain bandwidth (a) c small signal current gain C sm3178a 0.5 1 10 5 10 100 5 2 50 20 f frequency (mhz) h small signal current gain fe v = 10v ce c t = 25 ? c c i = 0.5a current gain bandwidth product sm3178a 0.1 1 10 0 20 40 60 80 100 0.2 0.5 0.2 0.5 f current gain bandwidth product t i current gain bandwidth (a) c


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